Beating Intel and TSMC, Samsung outs 10nm cache memory for future mobile chipsets
Since Intel postponed its 10nm nodes for 2017, Samsung has seemingly already won the race with TSMC to out the first 10nm FinFET production lines next year, and have a retail device on 10nm chipsets by early 2017, just in time for an eventual Galaxy S8. In the meantime, the Galaxy S7 will likely run on a next-gen 14nm process that further improves power draw and performance, compared to the early generation that is in the Galaxy S6 or the iPhone 6s.
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