Qualcomm Snapdragon 835 specs leaked, it could power the Galaxy S8
Samsung and Qualcomm have already announced the next chipset that will be embedded in some of the most powerful smartphones next year, the Snapdragon 835.
However, aside from the fact that it's made using Samsung's 10nm FinFET process and a few other details, the companies did not reveal important aspects about the chipset.
Well, it looks like a document showing the alleged Snapdragon 835 specifications has just leaked from China. According to this document, Qualcomm's new chipset will accommodate eight cores instead of four, so the Snapdragon 835 will actually be an octa-core processor unlike the Snapdragon 820/821.
A new graphics processing unit will be part of the Snapdragon 835 chipset as well, the Adreno 540. Also, the SoC is supposed to support UFS 2.1 technology, the next iteration of the Universal Flash Storage.
Universal Flash Storage version 2.1 has been confirmed to offer major improvements over earlier versions, and it's supposed to provide data security through the use of inline cryptography between the SoC and UFS Storage device.
The leaked document also mentions that the Snapdragon 835 chipset will be commercially available starting Q1 2017, and that Samsung's Galaxy S8 might be one of the first phones powered by Qualcomm's new processor.
It's also worth noting that the document mentions another unannounced Qualcomm chipset that's supposed to land in Q2 2017, the Snapdragon 660. This one will come with eight cores as well, along with an Adreno 512 GPU and UFS 2.1 support. However, the Snapdragon 660 will be manufactured using the 14nm process, not the 10nm.