Samsung develops wide I/O interface Mobile DRAM
Samsung, one of the two leading makers of mobile DDR, announced that it has developed a 1 Gigabit mobile DRAM unit using the 50nm process. The memory could be implemented in mobile gadgets like smartphones and tablets. Samsung will use a wide I/O interface allowing for transfers of up to 12.8GB per second. In addition, the new memory will boost bandwidth eight times in comparison to current mobile DDR DRAM, while managing to lower power consumption down by nearly 87%.
The data transmission rates hike is
mostly due to the fact that Samsung now uses 512 pins for input and
output, up from 32 pins used on previous generations of mobile
memory. Samsung promises to bring us 20nm-class 4 Gigabit mobile DRAM as
soon as 2013. Pair that with the CPUs of the future and you are
getting a desktop-like capacity on a pocketable device.