Samsung develops wide I/O interface Mobile DRAM
Samsung, one of the two leading makersof mobile DDR, announced that it has developed a 1 Gigabit mobileDRAM unit using the 50nm process. The memory could be implemented inmobile gadgets like smartphones and tablets. Samsung will use a wideI/O interface allowing for transfers of up to 12.8GB per second. In addition, the new memory will boost bandwidtheight times in comparison to current mobile DDR DRAM, while managingto lower power consumption down by nearly 87%.
The data transmission rates hike ismostly due to the fact that Samsung now uses 512 pins for input andoutput, up from 32 pins used on previous generations of mobilememory. Samsung promises to bring us 20nm-class 4 Gigabit mobile DRAM assoon as 2013. Pair that with the CPUs of the future and you aregetting a desktop-like capacity on a pocketable device.