TSMC kicks off 16nm FinFET manufacturing in 2013, to test EUV at 10nm in 2015
0. phoneArena 12 Apr 2013, 06:40 posted on
TSMC has confirmed its plans to aggressively pursue 16nm FinFET chip manufacturing by the end of 2013, and it also expects extreme UV lithography to allow it to make 10nm silicon...
This is a discussion for a news. To read the whole news, click here
4. Captain_Doug (Posts: 997; Member since: 10 Feb 2012)
Lowest possible is around 5-7nm. After that they'll have to make a new way to produce these chips or find out how to make them smaller.
6. TheLolGuy (Posts: 483; Member since: 05 Mar 2013)
At that point, chips will need a radical redesign from the ground up, or new materials for the transistors. Some candidates for this is carbon nanotubes, germanane, molybdenum sulfide, etc.
While the gaps may not close much more than that with these materials, they switch easier, conduct electricity much more effectively and thus can have much higher clock speeds as a result... theoretically :)
3. Captain_Doug (Posts: 997; Member since: 10 Feb 2012)
Wasn't there a stink about it not really being 10nm? It's actually 1X or something so it could be 10nm but it's most likely 19nm.
5. mittalmailbox (Posts: 51; Member since: 14 Feb 2012)
Graphene is the future, Graphene may help making several times faster chips with low power consumption.
7. wumberpeb (Posts: 453; Member since: 14 Mar 2011)
Graphene has a few years until they make it commercially viable and easily manufactured. The logical next step, already in progress, is 3D stacking. Chips on top of chips, building up without building out